BSC027N06LS5ATMA1 vs IPD60R280P7SAUMA1 Vergleich
Detaillierter Direktvergleich von BSC027N06LS5ATMA1 von Infineon und IPD60R280P7SAUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC027N06LS5ATMA1 | IPD60R280P7SAUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,66 | $0,48 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 5 | CoolMOS P7 (7th generation, 600 V) |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | CoolMOS P7 Superjunction (SJ) N-channel |
| Drain-Source Voltage (VDS) | 60 V | 600 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level | 4 V max @ ID = 190 µA |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Continuous Drain Current (ID) at Tc=100°C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max @ VGS=10V | 2.7 mOhm | — |
| On-Resistance (RDS(on)) @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Power Dissipation (PD) at Tc=25°C | 83 W | — |
| Betriebstemperaturbereich | -55°C to +150°C | — |
| Gehäuse / Bauform | PG-TDSON-8-7 (SuperSO8 5x6) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| Gate Charge (Qg) | [DATA_NEEDED: total Qg] | — |
| Avalanche Energy Rated | Yes | — |
| RoHS-Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Continuous Drain Current (ID, Tc) | — | 12 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 280 mΩ (typical) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Power Dissipation (Ptot, Tc) | — | 53 W |
| Operating Junction Temperature (TJ) | — | -40 °C to +150 °C |
| Gehäuse | — | PG-TO252-3 (DPAK) |
| MSL-Level | — | 1 |
| Integrated ESD Protection | — | Yes |