BSC027N10NS5ATMA1 vs BSC0993NDATMA1 Vergleich
Detaillierter Direktvergleich von BSC027N10NS5ATMA1 von Infineon und BSC0993NDATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC027N10NS5ATMA1 | BSC0993NDATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | NRND | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,10 | $1,32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC027N10NS5ATMA1 | — |
| Technology | OptiMOS 5 (100V) | OptiMOS 5 trench MOSFET |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at Ta | 23 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | 194 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 214 W | — |
| Gehäuse | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TISON-8 |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj min/max] | -55C to +150C (junction) |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) | — |
| Product Series | — | OptiMOS 5 30V |
| Configuration | — | Dual N-Channel (Array) |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) @ Ta | — | 17 A |
| Channel Mode | — | Enhancement |
| ESD Protection | — | Yes (integrated) |
| Lead-Free | — | Yes |
| Rds(on) max @ Vgs=10V | — | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |