BSC0504NSIATMA1 vs BSC021N08NS5ATMA1 Vergleich
Detaillierter Direktvergleich von BSC0504NSIATMA1 von Infineon und BSC021N08NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC0504NSIATMA1 | BSC021N08NS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $0,81 |
| Transistortyp | N-channel MOSFET | — |
| Drain-to-Source Voltage | 30 V | — |
| Continuous Drain Current at Ta | 21 A | — |
| Continuous Drain Current at Tc | 72 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| Technology Family | OptiMOS 5 | — |
| Gehäuse | PG-TDSON-8-6 | SuperSO8 5x6 (PG-TSON-8-3) |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 8 pins | — |
| Exposed Pad | Yes, according to distributor package description | — |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| Gate-Schwellenspannung | [DATA_NEEDED: gate threshold voltage] | — |
| Wärmewiderstand | [DATA_NEEDED: thermal resistance] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| RoHS-Status | unknown | Compliant (Pb-free) |
| Lead-Free Status | unknown | — |
| Halogen-Free Status | unknown | — |
| REACH Status | unknown | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC021N08NS5ATMA1 |
| Technology | — | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (V_DS max) | — | 80 V |
| Continuous Drain Current (I_D, Tc=25°C) | — | 226 A |
| Continuous Drain Current (I_D, Tc=100°C) | — | 100 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max (V_GS=10 V) | — | 2.1 mΩ |
| Gate-Source Voltage V_GS max | — | ±20 V |
| Power Dissipation P_D (Tc=25°C) | — | 214 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Total Gate Charge Q_G typ | — | [DATA_NEEDED: total gate charge] |
| R_thJC thermal resistance max | — | [DATA_NEEDED: R_thJC] |
| MSL-Level | — | MSL 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Delivery Form | — | Tape & Reel (T&R) |