BSC054N04NSGATMA1 vs BSC035N04LSGATMA1 Vergleich
Detaillierter Direktvergleich von BSC054N04NSGATMA1 von Infineon und BSC035N04LSGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC054N04NSGATMA1 | BSC035N04LSGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,42 | $0,48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC054N04NSGATMA1 | — |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tc=25C | 81 A | — |
| Continuous Drain Current (ID) at Ta=25C | 17 A | — |
| On-Resistance RDS(on) max at VGS=10V | 5.4 mOhm | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Power Dissipation at Tc=25C | 57 W | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Betriebstemperaturbereich | -55C to +150C | — |
| Gehäuse | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (8-pin, exposed drain pad) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | Compliant |
| Gate Drive Voltage (recommended) | 10 V | — |
| Lead-Free Reflow | Yes | — |
| Series | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Continuous Drain Current (ID) at Ta=25°C | — | 21 A |
| RDS(on) Max at VGS=10V | — | 3.5 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V (typ) |
| Power Dissipation (Pd) at Ta=25°C | — | 2.5 W |
| Power Dissipation (Pd) at Tc=25°C | — | 69 W |
| Betriebs-Sperrschichttemperatur | — | -55°C to +150°C |
| Lead-Free | — | Yes |