BSC084P03NS3GATMA1 vs BSP316PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSC084P03NS3GATMA1 von Infineon und BSP316PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon
BSC084P03NS3GATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | BSC084P03NS3GATMA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,24 | $0,21 |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (Ta) | 14.9 A | — |
| Continuous Drain Current (Tc) | 78.6 A | — |
| Rds(on) max @ VGS = -10 V | 6.1 mOhm | — |
| Rds(on) max @ VGS = -2.5 V | [DATA_NEEDED: Rds(on) at 2.5V] | — |
| Gate Threshold Voltage (VGS(th) typ) | -1.7 V | — |
| Total Gate Charge (Qg) | 58 nC @ VGS = -10 V | — |
| Input Capacitance (Ciss) | 3.19 nF | — |
| Output Capacitance (Coss) | 110 pF | — |
| Reverse Transfer Capacitance (Crss) | 1.52 nF | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 69 W | — |
| Betriebstemperaturbereich | -55C to +150C | -55 C to +150 C (junction) |
| Gehäuse | PG-TDSON-8-5 (SuperSO8 5x6) | PG-SOT223-4 (TO-261-4) |
| Montageart | Surface Mount | Surface Mount |
| Technology Family | OptiMOS P3 | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (unlimited) | 1 |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TA=25C | — | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Anzahl der Pins | — | 3 + thermal tab |
| Channel Mode | — | Enhancement |
| Technology | — | SIPMOS (P-channel MOSFET) |
| Packaging | — | Tape & Reel (H6327 suffix) |