BSC0906NSATMA1 vs BSC066N06NSATMA1 Vergleich
Detaillierter Direktvergleich von BSC0906NSATMA1 von Infineon und BSC066N06NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC0906NSATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,49 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 18 A | — |
| Continuous Drain Current (ID) at Tc | 63 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| Gehäuse | PG-TDSON-8-6 (SuperSO8, 5x6 mm) | PG-TDSON-8-6 (TDSON EP) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS | OptiMOS 5 60 V trench-gate |
| RDS(on) max (typical reference) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | 1.7 V (typ) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ VGS=10V] | 26 nC (typ) |
| Betriebstemperaturbereich | -55C to +150C (junction, typical) | — |
| Pin-Anzahl | 8 | — |
| RoHS-Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A |
| Continuous Drain Current (ID) at TC=100°C | — | 45 A |
| Pulsed Drain Current (IDM) | — | 256 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 6.6 mΩ (max) |
| Power Dissipation (PD) at TC=25°C | — | 46 W |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 1.3 °C/W |
| Betriebs-Sperrschichttemperatur | — | -55°C to +150°C |
| MSL-Level | — | 1 |