BSC0906NSATMA1 vs BSC066N06NSATMA1 对比
详细并排对比 BSC0906NSATMA1 出自 Infineon 和 BSC066N06NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC0906NSATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.48 | $0.49 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 18 A | — |
| Continuous Drain Current (ID) at Tc | 63 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| 封装 | PG-TDSON-8-6 (SuperSO8, 5x6 mm) | PG-TDSON-8-6 (TDSON EP) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS | OptiMOS 5 60 V trench-gate |
| RDS(on) max (typical reference) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | 1.7 V (typ) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ VGS=10V] | 26 nC (typ) |
| 工作温度范围 | -55C to +150C (junction, typical) | — |
| 引脚数量 | 8 | — |
| RoHS 状态 | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A |
| Continuous Drain Current (ID) at TC=100°C | — | 45 A |
| Pulsed Drain Current (IDM) | — | 256 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 6.6 mΩ (max) |
| Power Dissipation (PD) at TC=25°C | — | 46 W |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 1.3 °C/W |
| 工作结温 | — | -55°C to +150°C |
| MSL 等级 | — | 1 |