BSC0906NSATMA1 vs BSC0902NSIATMA1 Vergleich

Detaillierter Direktvergleich von BSC0906NSATMA1 von Infineon und BSC0902NSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSC0906NSATMA1 BSC0902NSIATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,48 $0,32
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta 18 A —
Continuous Drain Current (ID) at Tc 63 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 30 W —
Gehäuse PG-TDSON-8-6 (SuperSO8, 5x6 mm) PG-TDSON-8-6 (TDSON-8)
Montageart Surface Mount Surface Mount
Technology OptiMOS —
RDS(on) max (typical reference) [DATA_NEEDED: RDS(on) max @ VGS=10V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg @ VGS=10V] —
Betriebstemperaturbereich -55C to +150C (junction, typical) -55C to +150C (junction)
Pin-Anzahl 8 —
RoHS-Status Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS 30V
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TA=25C — 23 A
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-State Resistance RDS(on) Max at VGS=10V — 2.8 mOhm
Gate Charge QG(0V..10V) — 24 nC
Output Charge QOSS — 17 nC
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 48 W
Built-in Diode — Yes (single with built-in diode)
MSL-Level — [DATA_NEEDED: MSL rating]
Lead-Free — Yes
Halogenfrei — Yes

Datenblätter & Ressourcen

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