BSC097N06NSATMA1 vs IPD90N04S403ATMA1 Vergleich

Detaillierter Direktvergleich von BSC097N06NSATMA1 von Infineon und IPD90N04S403ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSC097N06NSATMA1 IPD90N04S403ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,38 $1,05
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Part Status Active —
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 46 A —
Continuous Drain Current (ID) at Ta=25C [DATA_NEEDED: ID at Ta=25C PCB-mounted] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM peak value] —
RDS(on) max at VGS=10 V 9.7 mOhm —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg typ) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 36 W —
Betriebs-Sperrschichttemperatur -55C to +150C -55C to +175C
Gehäuse / Bauform PG-TDSON-8-6 (SuperSO8 5x6 mm) —
Montageart Surface Mount Surface Mount
Technology OptiMOS 5 (Trench) Trench MOSFET (OptiMOS-T2)
RoHS-Status Compliant —
MSL-Level 1 (Unlimited) MSL1 (peak reflow up to 260C)
Avalanche Rated Yes (EAS per datasheet) —
Product Family — OptiMOS-T2
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, Tc) — 90 A
On-State Resistance (R_DS(on)) — 3.2 mOhm typical at V_GS = 10 V
Maximum Power Dissipation (P_D, Tc=25C) — 94 W
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: gate threshold voltage]
Gehäuse — PG-TO252-3-313 (DPAK)
AEC-Q101 Qualification — Qualified (automotive grade)
Avalanche Tested — 100% avalanche-tested
RoHS Compliance — Compliant (Green Package)

Datenblätter & Ressourcen

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