BSC097N06NSATMA1 vs IPD90N04S403ATMA1 비교
다음의 상세 나란히 비교: BSC097N06NSATMA1 제조: Infineon 및 IPD90N04S403ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC097N06NSATMA1 | IPD90N04S403ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.38 | $1.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 46 A | — |
| Continuous Drain Current (ID) at Ta=25C | [DATA_NEEDED: ID at Ta=25C PCB-mounted] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM peak value] | — |
| RDS(on) max at VGS=10 V | 9.7 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 36 W | — |
| 동작 접합 온도 | -55C to +150C | -55C to +175C |
| 패키지 / 케이스 | PG-TDSON-8-6 (SuperSO8 5x6 mm) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Trench) | Trench MOSFET (OptiMOS-T2) |
| RoHS 상태 | Compliant | — |
| MSL 레벨 | 1 (Unlimited) | MSL1 (peak reflow up to 260C) |
| Avalanche Rated | Yes (EAS per datasheet) | — |
| Product Family | — | OptiMOS-T2 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 90 A |
| On-State Resistance (R_DS(on)) | — | 3.2 mOhm typical at V_GS = 10 V |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 94 W |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| 패키지 | — | PG-TO252-3-313 (DPAK) |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| Avalanche Tested | — | 100% avalanche-tested |
| RoHS Compliance | — | Compliant (Green Package) |