BSC12DN20NS3GATMA1 vs BSC005N03LS5IATMA1 Vergleich
Detaillierter Direktvergleich von BSC12DN20NS3GATMA1 von Infineon und BSC005N03LS5IATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | BSC12DN20NS3GATMA1 | BSC005N03LS5IATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,61 | $1,32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 200V | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID, Tc) | 11.3 A | — |
| Power Dissipation (PD, Tc) | 50 W | — |
| Gehäuse | PG-TDSON-8-5 | PG-TDSON-8 FL (SuperSO8 5x6) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold typical] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Technology | OptiMOS power MOSFET | OptiMOS 5 (N-channel trench MOSFET) |
| RoHS-Status | Compliant | Compliant (per LCSC listing) |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Configuration | Single N-channel | — |
| Pin-Anzahl | 8 | — |
| Part Number | — | BSC005N03LS5IATMA1 |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 42 A |
| Continuous Drain Current (ID) at Tc | — | 433 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max | — | 0.55 mΩ at VGS = 10 V, ID = 50 A |
| Gate-Source Threshold Voltage VGS(th) | — | 2 V (typ) at VGS = 10 mA |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 188 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Polarity | — | N-Channel |