BSC146N10LS5ATMA1 vs IAUZ40N06S5L050ATMA1 Vergleich
Detaillierter Direktvergleich von BSC146N10LS5ATMA1 von Infineon und IAUZ40N06S5L050ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSC146N10LS5ATMA1 | IAUZ40N06S5L050ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,74 | $0,71 |
| Technology | OptiMOS 5 (logic-level) | OptiMOS 5 (super-junction N-channel) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (ID) at Tc=25 C | 44 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: IDM] | — |
| RDS(on) max at VGS=10 V | 14.6 mOhm | — |
| RDS(on) max at VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (typ. ~1.7 V) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 52 W | — |
| Betriebstemperaturbereich | -55 C to +150 C (TJ max) | — |
| Gehäuse | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TSDSON-8-33 (TSDSON-8) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | Compliant |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS] | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 60 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | [DATA_NEEDED: continuous drain current at Tc=25C] |
| Drain Current at T<sub>j</sub> | — | 90 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | — | 5 mΩ |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | — | 6.4 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | 2.2 V at 29 µA |
| Total Gate Charge Q<sub>G</sub> | — | 28.2 nC |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | — | 71 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q100 qualified |