BSC146N10LS5ATMA1 vs IAUZ40N06S5L050ATMA1 Comparison

Detailed side-by-side comparison of BSC146N10LS5ATMA1 by Infineon and IAUZ40N06S5L050ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC146N10LS5ATMA1 BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 ✓ Active

Specification Comparison

Parameter BSC146N10LS5ATMA1 IAUZ40N06S5L050ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology OptiMOS 5 (logic-level) OptiMOS 5 (super-junction N-channel)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at Tc=25 C 44 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: IDM] —
RDS(on) max at VGS=10 V 14.6 mOhm —
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) Logic-level (typ. ~1.7 V) —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 52 W —
Operating Temperature Range -55 C to +150 C (TJ max) —
Package PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TSDSON-8-33 (TSDSON-8)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) —
RoHS Status Compliant Compliant
Avalanche Energy (EAS) [DATA_NEEDED: EAS] —
Polarity — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 60 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — [DATA_NEEDED: continuous drain current at Tc=25C]
Drain Current at T<sub>j</sub> — 90 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V — 5 mΩ
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A — 6.4 mΩ
Gate Threshold Voltage V<sub>GS(th)</sub> — 2.2 V at 29 µA
Total Gate Charge Q<sub>G</sub> — 28.2 nC
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) — 71 W
Operating Junction Temperature — -55 °C to +175 °C
Automotive Qualification — AEC-Q100 qualified

Datasheets & Resources

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