BSC146N10LS5ATMA1 vs IAUZ40N06S5L050ATMA1 Comparison
Detailed side-by-side comparison of BSC146N10LS5ATMA1 by Infineon and IAUZ40N06S5L050ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC146N10LS5ATMA1
BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon
BSC146N10LS5ATMA1 β ActiveInfineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 β ActiveSpecification Comparison
| Parameter | BSC146N10LS5ATMA1 | IAUZ40N06S5L050ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.71 |
| Technology | OptiMOS 5 (logic-level) | OptiMOS 5 (super-junction N-channel) |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) max | 100 V | β |
| Continuous Drain Current (ID) at Tc=25 C | 44 A | β |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: IDM] | β |
| RDS(on) max at VGS=10 V | 14.6 mOhm | β |
| RDS(on) max at VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | Logic-level (typ. ~1.7 V) | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 52 W | β |
| Operating Temperature Range | -55 C to +150 C (TJ max) | β |
| Package | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TSDSON-8-33 (TSDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS] | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 60 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | [DATA_NEEDED: continuous drain current at Tc=25C] |
| Drain Current at T<sub>j</sub> | β | 90 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | β | 5 mΞ© |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | β | 6.4 mΞ© |
| Gate Threshold Voltage V<sub>GS(th)</sub> | β | 2.2 V at 29 Β΅A |
| Total Gate Charge Q<sub>G</sub> | β | 28.2 nC |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | 71 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Automotive Qualification | β | AEC-Q100 qualified |