BSC150N03LDGATMA1 vs BSC0504NSIATMA1 Vergleich
Detaillierter Direktvergleich von BSC150N03LDGATMA1 von Infineon und BSC0504NSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC150N03LDGATMA1 - 30V 20A Dual N-Ch OptiMOS 3 MOSFET | Infineon
BSC150N03LDGATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | BSC150N03LDGATMA1 | BSC0504NSIATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,46 | $0,00 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| Configuration | Dual N-Channel MOSFET Array (half-bridge) | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) @ TA=25C | 20 A | — |
| Continuous Drain Current (Id) @ TA=70C | [DATA_NEEDED: Id at TA=70C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm] | — |
| Gate-Source Voltage (Vgs) | ±20 V | — |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | — |
| On-State Resistance (Rds(on)) @ Vgs=10V | [DATA_NEEDED: typical Rds(on) mOhm] | — |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: typical Rds(on) mOhm] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg nC] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: typical Qgd nC] | — |
| Output Charge (Qoss) | [DATA_NEEDED: typical Qoss nC] | — |
| Power Dissipation (Pd) | 26 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Gehäuse | PG-TDSON-8-4 (5x6 mm) | PG-TDSON-8-6 |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant | unknown |
| Halogenfrei | Yes | — |
| Transistortyp | — | N-channel MOSFET |
| Drain-to-Source Voltage | — | 30 V |
| Continuous Drain Current at Ta | — | 21 A |
| Continuous Drain Current at Tc | — | 72 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| Technology Family | — | OptiMOS 5 |
| Anzahl der Pins | — | 8 pins |
| Exposed Pad | — | Yes, according to distributor package description |
| On-State Resistance | — | [DATA_NEEDED: on-state resistance] |
| Gate Charge | — | [DATA_NEEDED: gate charge] |
| Gate-Schwellenspannung | — | [DATA_NEEDED: gate threshold voltage] |
| Wärmewiderstand | — | [DATA_NEEDED: thermal resistance] |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| AEC-Q100 Qualification | — | [DATA_NEEDED: AEC-Q100 qualification] |
| Lead-Free Status | — | unknown |
| Halogen-Free Status | — | unknown |
| REACH Status | — | unknown |