BSC150N03LDGATMA1 vs BSC0504NSIATMA1 Comparação
Comparação detalhada lado a lado de BSC150N03LDGATMA1 por Infineon e BSC0504NSIATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
BSC150N03LDGATMA1 - 30V 20A Dual N-Ch OptiMOS 3 MOSFET | Infineon
BSC150N03LDGATMA1 ✓ Ativo
Comparação de especificações
| Parâmetro | BSC150N03LDGATMA1 | BSC0504NSIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,46 | $0,00 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| Configuration | Dual N-Channel MOSFET Array (half-bridge) | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) @ TA=25C | 20 A | — |
| Continuous Drain Current (Id) @ TA=70C | [DATA_NEEDED: Id at TA=70C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm] | — |
| Gate-Source Voltage (Vgs) | ±20 V | — |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | — |
| On-State Resistance (Rds(on)) @ Vgs=10V | [DATA_NEEDED: typical Rds(on) mOhm] | — |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: typical Rds(on) mOhm] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg nC] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: typical Qgd nC] | — |
| Output Charge (Qoss) | [DATA_NEEDED: typical Qoss nC] | — |
| Power Dissipation (Pd) | 26 W | — |
| Temperatura de junção de operação | -55C to +150C | — |
| Encapsulamento | PG-TDSON-8-4 (5x6 mm) | PG-TDSON-8-6 |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | 1 | — |
| Status RoHS | Compliant | unknown |
| Livre de halogênio | Yes | — |
| Tipo de transistor | — | N-channel MOSFET |
| Drain-to-Source Voltage | — | 30 V |
| Continuous Drain Current at Ta | — | 21 A |
| Continuous Drain Current at Tc | — | 72 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| Technology Family | — | OptiMOS 5 |
| Número de pinos | — | 8 pins |
| Exposed Pad | — | Yes, according to distributor package description |
| On-State Resistance | — | [DATA_NEEDED: on-state resistance] |
| Gate Charge | — | [DATA_NEEDED: gate charge] |
| Tensão de limiar de gate | — | [DATA_NEEDED: gate threshold voltage] |
| Resistência térmica | — | [DATA_NEEDED: thermal resistance] |
| Faixa de temperatura de operação | — | [DATA_NEEDED: operating temperature range] |
| AEC-Q100 Qualification | — | [DATA_NEEDED: AEC-Q100 qualification] |
| Lead-Free Status | — | unknown |
| Halogen-Free Status | — | unknown |
| REACH Status | — | unknown |