BSC155N06NDATMA1 vs BSC0501NSIATMA1 Vergleich

Detaillierter Direktvergleich von BSC155N06NDATMA1 von Infineon und BSC0501NSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSC155N06NDATMA1 BSC0501NSIATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,62 $0,65
Manufacturer Infineon Technologies Infineon
Part Number BSC155N06NDATMA1 —
Technology OptiMOS 3 (N-channel trench) Trench-gate OptiMOS 5
Configuration Dual N-channel MOSFET array —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
On-State Resistance RDS(on) max at VGS=10V 15.5 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Betriebstemperaturbereich -55 C to +175 C —
Gehäuse PG-TDSON-8-4 (SuperSO8 5x6 mm) PG-TDSON-8-6 (SuperSO8)
Montageart Surface Mount Surface Mount
Power Dissipation (Tc=25C) 50 W —
MSL-Level 1 1 (per JEDEC J-STD-020)
RoHS-Status Compliant (Pb-free plating) Compliant
Lead-Free Plating Yes —
Shoot-Through Immunity Qgd/Qgs < 0.8 —
Product Family — OptiMOS 5 25V/30V
Transistortyp — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 29 A
Continuous Drain Current (ID) at Tc — 100 A
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 50 W
Gate-Source Voltage (VGS) — ±20 V
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Betriebs-Sperrschichttemperatur — -55C to +150C
Avalanche Rated — Yes

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