BSC190N15NS3GATMA1 vs IPP075N15N3GXKSA1 Vergleich

Detaillierter Direktvergleich von BSC190N15NS3GATMA1 von Infineon und IPP075N15N3GXKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSC190N15NS3GATMA1 IPP075N15N3GXKSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,98 $1,92
Technology OptiMOS 3 (N-Channel) N-Channel MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V —
On-Resistance RDS(on) max at VGS=10V 19 mOhm —
On-Resistance RDS(on) typ at VGS=10V [DATA_NEEDED: RDS(on) typical at 10V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at Tc=25C 125 W —
Betriebstemperaturbereich -55 C to +150 C [DATA_NEEDED: junction operating temperature range]
Gehäuse PG-TDSON-8-1 (TDSON-8 EP) PG-TO220-3 (TO-220 through-hole)
Montageart Surface Mount Through Hole
RoHS-Status Compliant —
MSL-Level 1 —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Continuous Drain Current (ID, Tc=25C) — 100 A
Power Dissipation (PD, Tc=25C) — 300 W
On-State Resistance (RDS(on) max, VGS=10V) — 7.5 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage absolute max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Lead-Free / RoHS — RoHS Compliant
Ordering Code Suffix — GXKSA1 (Tube pack, RoHS compliant)

Datenblätter & Ressourcen

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