BSC190N15NS3GATMA1 vs IPP075N15N3GXKSA1 Comparison

Detailed side-by-side comparison of BSC190N15NS3GATMA1 by Infineon and IPP075N15N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC190N15NS3GATMA1 IPP075N15N3GXKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology OptiMOS 3 (N-Channel) N-Channel MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V —
On-Resistance RDS(on) max at VGS=10V 19 mOhm —
On-Resistance RDS(on) typ at VGS=10V [DATA_NEEDED: RDS(on) typical at 10V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at Tc=25C 125 W —
Operating Temperature Range -55 C to +150 C [DATA_NEEDED: junction operating temperature range]
Package PG-TDSON-8-1 (TDSON-8 EP) PG-TO220-3 (TO-220 through-hole)
Mounting Type Surface Mount Through Hole
RoHS Status Compliant —
MSL Level 1 —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Continuous Drain Current (ID, Tc=25C) — 100 A
Power Dissipation (PD, Tc=25C) — 300 W
On-State Resistance (RDS(on) max, VGS=10V) — 7.5 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage absolute max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Lead-Free / RoHS — RoHS Compliant
Ordering Code Suffix — GXKSA1 (Tube pack, RoHS compliant)

Datasheets & Resources

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