BSL215CH6327XTSA1 vs IRLL2705TRPBF Vergleich
Detaillierter Direktvergleich von BSL215CH6327XTSA1 von Infineon und IRLL2705TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
BSL215CH6327XTSA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | BSL215CH6327XTSA1 | IRLL2705TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,21 | $0,22 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| FET Type | N-Channel and P-Channel Complementary Pair | N-Channel MOSFET, Metal Oxide |
| Drain-Source Voltage (V_DS) | 20 V | — |
| Continuous Drain Current (I_D) | 1.5 A | — |
| R_DS(on) Max @ V_GS=4.5V | 250 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Power Dissipation (P_D) | 500 mW | — |
| Gehäuse / Bauform | PG-TSOP6-6 (6-pin TSOP) | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +150C | — |
| Configuration | Half-bridge (1 N + 1 P) | — |
| Technology | OptiMOS trench MOSFET | HEXFET (IR MOSFET fifth generation) |
| MSL-Level | 1 (unlimited) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes (PBF suffix) |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at 25 deg C | — | 3.8 A |
| Peak Drain Current (IDM, pulsed) | — | 5.2 A |
| RDS(on) max at VGS=10V | — | 40 mOhm |
| Total Gate Charge (Qg) | — | 32 nC |
| Gate Drive Level | — | Logic-Level |
| Power Dissipation at TA=25 deg C | — | 1 W (Ta), 2.1 W (per LCSC listing) |
| Betriebstemperaturbereich | — | -55 deg C to +175 deg C |
| Gehäuse | — | SOT-223 |
| Dynamic dv/dt Rating | — | Yes |