BSL308CH6327XTSA1 vs BSD235CH6327XTSA1 Vergleich

Detaillierter Direktvergleich von BSL308CH6327XTSA1 von Infineon und BSD235CH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSL308CH6327XTSA1 BSD235CH6327XTSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,21 $0,12
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ low-voltage power MOSFETs —
Configuration Complementary dual MOSFET (1 N-channel + 1 P-channel) N+P complementary dual MOSFET
Gehäuse PG-TSOP6-6 (TSOP-6, 6 pins) —
Drain-to-Source Voltage (VDS) 30 V 20 V
Continuous Drain Current - N-channel (ID, N-ch) 2.3 A —
Continuous Drain Current - P-channel (ID, P-ch) 2 A —
Total Power Dissipation (Ptot) 500 mW 500 mW
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
On-State Resistance N-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) N-ch] —
On-State Resistance P-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) P-ch] —
Total Gate Charge (Qg) 5 nC @ 10 V —
Input Capacitance (Ciss) 18 pF —
Betriebstemperaturbereich -55 °C to +150 °C -55 °C to +150 °C (junction)
Montageart Surface Mount Surface Mount
MSL-Level 1 (per JEDEC J-STD-020) 1
Automotive Qualified Yes (per Infineon part-number suffix, automotive grade) —
RoHS-Status Compliant Compliant (lead-free)
Lead-Free Yes —
Halogenfrei Yes (per Infineon product family convention) —
Part Family — OptiMOS™
N-Channel Continuous Drain Current (ID) — 950 mA
P-Channel Continuous Drain Current (ID) — 530 mA (negative polarity)
Package Type — PG-SOT363-6-1 (SOT-363, 6-pin)
Technology — OptiMOS™ low-voltage
Polarity — N-channel + P-channel
Channel Mode — Enhancement
Pin-Anzahl — 6

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