BSL308CH6327XTSA1 vs BSP135H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSL308CH6327XTSA1 von Infineon und BSP135H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSL308CH6327XTSA1 | BSP135H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,21 | $0,43 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ low-voltage power MOSFETs | — |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) | — |
| Gehäuse | PG-TSOP6-6 (TSOP-6, 6 pins) | PG-SOT223-4 (SOT-223-3 plus tab) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A | — |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) N-ch] | — |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) P-ch] | — |
| Total Gate Charge (Qg) | 5 nC @ 10 V | — |
| Input Capacitance (Ciss) | 18 pF | — |
| Betriebstemperaturbereich | -55 °C to +150 °C | -55C to +150C (junction, typical) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogenfrei | Yes (per Infineon product family convention) | — |
| Part Number | — | BSP135H6327XTSA1 |
| FET Type | — | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) | — | 120 mA |
| Power Dissipation (PD) | — | 1.8 W |
| On-Resistance RDS(on) max | — | 45 ohm at VGS = 0 V |
| On-Resistance RDS(on) | — | 25 ohm (typical, per digchip) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Operating Mode | — | Normally ON (depletion) |
| Technology | — | SIPMOS (planar DMOS) |