BSL308CH6327XTSA1 vs BSP135H6327XTSA1 비교

다음의 상세 나란히 비교: BSL308CH6327XTSA1 제조: Infineon 및 BSP135H6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSL308CH6327XTSA1 BSP135H6327XTSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.21 $0.43
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ low-voltage power MOSFETs —
Configuration Complementary dual MOSFET (1 N-channel + 1 P-channel) —
패키지 PG-TSOP6-6 (TSOP-6, 6 pins) PG-SOT223-4 (SOT-223-3 plus tab)
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current - N-channel (ID, N-ch) 2.3 A —
Continuous Drain Current - P-channel (ID, P-ch) 2 A —
Total Power Dissipation (Ptot) 500 mW —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
On-State Resistance N-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) N-ch] —
On-State Resistance P-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) P-ch] —
Total Gate Charge (Qg) 5 nC @ 10 V —
Input Capacitance (Ciss) 18 pF —
동작 온도 범위 -55 °C to +150 °C -55C to +150C (junction, typical)
실장 유형 Surface Mount Surface Mount
MSL 레벨 1 (per JEDEC J-STD-020) 1
Automotive Qualified Yes (per Infineon part-number suffix, automotive grade) —
RoHS 상태 Compliant Compliant
Lead-Free Yes —
할로겐 프리 Yes (per Infineon product family convention) —
Part Number — BSP135H6327XTSA1
FET Type — N-Channel, Depletion Mode
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) — 120 mA
Power Dissipation (PD) — 1.8 W
On-Resistance RDS(on) max — 45 ohm at VGS = 0 V
On-Resistance RDS(on) — 25 ohm (typical, per digchip)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Operating Mode — Normally ON (depletion)
Technology — SIPMOS (planar DMOS)

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