BSP135H6906XTSA1 vs BSP315PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP135H6906XTSA1 von Infineon und BSP315PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP135H6906XTSA1 | BSP315PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,31 |
| FET Type | N-Channel Depletion Mode | P-Channel |
| Drain-Source Voltage (VDS) Max | 600 V | — |
| Continuous Drain Current (ID) at TA=25C | 120 mA | — |
| RDS(on) Max at VGS=0V | 45 Ohm | — |
| Power Dissipation (PD) Max | 1.8 W | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(off)) | Depletion mode (normally-on) | — |
| Betriebstemperaturbereich | -55C to +150C | -55 C to +150 C (junction) |
| Gehäuse | PG-SOT223-4 (SOT-223, 3+tab) | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 4 (3 leads + drain tab) | — |
| Technology | SIPMOS (planar high-voltage) | OptiMOS (enhancement mode) |
| MSL-Level | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | — |
| Automotive Qualification | AEC-Q101 (per datasheets.com parametric record) | — |
| Lead-Free | Yes | — |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -1.17 A (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Avalanche Energy Rated | — | Yes (per datasheet) |
| Lead-Free / RoHS | — | Yes / Compliant |