BSP88H6327XTSA1 vs BSL308CH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP88H6327XTSA1 von Infineon und BSL308CH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP88H6327XTSA1 | BSL308CH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,21 | $0,21 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 240 V | — |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | — |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | — |
| Gehäuse | PG-SOT223-4 (SOT-223-3) | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Montageart | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | — |
| Configuration | Single | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Betriebstemperatur | -55 C to +150 C | — |
| Technology | SIPMOS (planar enhancement mode) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: VGS(th) typical value] |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| MSL-Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 5 nC @ 10 V |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | 18 pF |
| Drain Tab Connection | SOT-223 tab is drain | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ low-voltage power MOSFETs |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current - N-channel (ID, N-ch) | — | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | — | 2 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) P-ch] |
| Betriebstemperaturbereich | — | -55 °C to +150 °C |
| Automotive Qualified | — | Yes (per Infineon part-number suffix, automotive grade) |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| Halogenfrei | — | Yes (per Infineon product family convention) |