BSP88H6327XTSA1 vs BSL308CH6327XTSA1 비교

다음의 상세 나란히 비교: BSP88H6327XTSA1 제조: Infineon 및 BSL308CH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSP88H6327XTSA1 BSL308CH6327XTSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.21 $0.21
트랜지스터 유형 N-Channel MOSFET —
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 350 mA at Ta=25 C —
Power Dissipation (PD) 1.8 W at Ta=25 C —
패키지 PG-SOT223-4 (SOT-223-3) PG-TSOP6-6 (TSOP-6, 6 pins)
실장 유형 Surface Mount Surface Mount
On-State Resistance (RDS(on)) 6 ohm typical at VGS=10 V —
Configuration Single Complementary dual MOSFET (1 N-channel + 1 P-channel)
동작 온도 -55 C to +150 C —
Technology SIPMOS (planar enhancement mode) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] [DATA_NEEDED: VGS(th) typical value]
Automotive Qualification AEC-Q101 qualified —
Lead Plating Pb-free —
RoHS Compliance Compliant —
MSL 레벨 [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] 5 nC @ 10 V
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] 18 pF
Drain Tab Connection SOT-223 tab is drain —
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ low-voltage power MOSFETs
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current - N-channel (ID, N-ch) — 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) — 2 A
Total Power Dissipation (Ptot) — 500 mW
On-State Resistance N-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) P-ch]
동작 온도 범위 — -55 °C to +150 °C
Automotive Qualified — Yes (per Infineon part-number suffix, automotive grade)
RoHS 상태 — Compliant
Lead-Free — Yes
할로겐 프리 — Yes (per Infineon product family convention)

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