BSP88H6327XTSA1 vs BSP89H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP88H6327XTSA1 von Infineon und BSP89H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP88H6327XTSA1 | BSP89H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,21 | $0,39 |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET, enhancement mode |
| Drain-Source Voltage (VDS) | 240 V | — |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | — |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | — |
| Gehäuse | PG-SOT223-4 (SOT-223-3) | PG-SOT223-4 (SOT-223, 4-pin with tab) |
| Montageart | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | — |
| Configuration | Single | — |
| Betriebstemperatur | -55 C to +150 C | — |
| Technology | SIPMOS (planar enhancement mode) | SIPMOS (planar power MOS) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: typical VGS(th) value] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (per ordering code H6327) |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain Tab Connection | SOT-223 tab is drain | — |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 240 V (VGS=0, ID=250 µA) |
| Continuous Drain Current (ID) at Ta=25°C | — | 0.35 A |
| Total Power Dissipation (Ptot) at Ta=25°C | — | 1.8 W (on FR4 PCB, 6 cm² cooling area) |
| On-State Resistance (RDS(on)) max | — | 6 Ω (typical) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Betriebstemperaturbereich | — | -55 °C to +150 °C (Tj) |
| Thermal Resistance Junction-Ambient (RthJA) | — | 70 K/W (6 cm² PCB) |
| Thermal Resistance Junction-Solder Point (RthJS) | — | 25 K/W |
| Logic-Level Gate Drive | — | Yes (logic-level compatible) |
| dv/dt Rated | — | Yes |
| ESD Protection | — | Internal gate-source Zener |
| RoHS-Status | — | Compliant |