BSP88H6327XTSA1 vs BSP89H6327XTSA1 비교

다음의 상세 나란히 비교: BSP88H6327XTSA1 제조: Infineon 및 BSP89H6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSP88H6327XTSA1 BSP89H6327XTSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.21 $0.39
트랜지스터 유형 N-Channel MOSFET N-Channel MOSFET, enhancement mode
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 350 mA at Ta=25 C —
Power Dissipation (PD) 1.8 W at Ta=25 C —
패키지 PG-SOT223-4 (SOT-223-3) PG-SOT223-4 (SOT-223, 4-pin with tab)
실장 유형 Surface Mount Surface Mount
On-State Resistance (RDS(on)) 6 ohm typical at VGS=10 V —
Configuration Single —
동작 온도 -55 C to +150 C —
Technology SIPMOS (planar enhancement mode) SIPMOS (planar power MOS)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] [DATA_NEEDED: typical VGS(th) value]
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per ordering code H6327)
Lead Plating Pb-free —
RoHS Compliance Compliant —
MSL 레벨 [DATA_NEEDED: MSL level] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Drain Tab Connection SOT-223 tab is drain —
Drain-Source Breakdown Voltage (V(BR)DSS) — 240 V (VGS=0, ID=250 µA)
Continuous Drain Current (ID) at Ta=25°C — 0.35 A
Total Power Dissipation (Ptot) at Ta=25°C — 1.8 W (on FR4 PCB, 6 cm² cooling area)
On-State Resistance (RDS(on)) max — 6 Ω (typical)
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
동작 온도 범위 — -55 °C to +150 °C (Tj)
Thermal Resistance Junction-Ambient (RthJA) — 70 K/W (6 cm² PCB)
Thermal Resistance Junction-Solder Point (RthJS) — 25 K/W
Logic-Level Gate Drive — Yes (logic-level compatible)
dv/dt Rated — Yes
ESD Protection — Internal gate-source Zener
RoHS 상태 — Compliant

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