BSP88H6327XTSA1 vs BSS192PH6327FTSA1 Vergleich

Detaillierter Direktvergleich von BSP88H6327XTSA1 von Infineon und BSS192PH6327FTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSP88H6327XTSA1 BSS192PH6327FTSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,21 $0,34
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 350 mA at Ta=25 C —
Power Dissipation (PD) 1.8 W at Ta=25 C —
Gehäuse PG-SOT223-4 (SOT-223-3) PG-SOT89 (SOT-89-3, 4-pin 3+Tab)
Montageart Surface Mount Surface Mount
On-State Resistance (RDS(on)) 6 ohm typical at VGS=10 V —
Configuration Single —
Betriebstemperatur -55 C to +150 C —
Technology SIPMOS (planar enhancement mode) MOSFET (Metal Oxide)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] —
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per distributor listing)
Lead Plating Pb-free —
RoHS Compliance Compliant —
MSL-Level [DATA_NEEDED: MSL level] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Drain Tab Connection SOT-223 tab is drain —
FET Type — P-Channel
Drain-to-Source Voltage (Vdss) — 250 V
Continuous Drain Current (Id) @ 25C — 190 mA (Ta)
Power Dissipation (Pd) — 1 W (Ta)
Drive Voltage (Max Rds On, Min Rds On) — 2.8 V, 10 V
Rds On (Max) @ Id, Vgs — [DATA_NEEDED: Rds On max @ Vgs]
Vgs(th) (Max) — [DATA_NEEDED: gate threshold voltage max]
Vgs(th) (Typ) — [DATA_NEEDED: gate threshold voltage typ]
Betriebstemperaturbereich — [DATA_NEEDED: Tj max / operating temp]
Series — SIPMOS Small-Signal-Transistor
Part Status — Active
RoHS-Status — [DATA_NEEDED: explicit RoHS status from datasheet]

Datenblätter & Ressourcen

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