BSP88H6327XTSA1 vs BSS192PH6327FTSA1 비교
다음의 상세 나란히 비교: BSP88H6327XTSA1 제조: Infineon 및 BSS192PH6327FTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSP88H6327XTSA1 | BSS192PH6327FTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.21 | $0.34 |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 240 V | — |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | — |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | — |
| 패키지 | PG-SOT223-4 (SOT-223-3) | PG-SOT89 (SOT-89-3, 4-pin 3+Tab) |
| 실장 유형 | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | — |
| Configuration | Single | — |
| 동작 온도 | -55 C to +150 C | — |
| Technology | SIPMOS (planar enhancement mode) | MOSFET (Metal Oxide) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (per distributor listing) |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| MSL 레벨 | [DATA_NEEDED: MSL level] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain Tab Connection | SOT-223 tab is drain | — |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (Vdss) | — | 250 V |
| Continuous Drain Current (Id) @ 25C | — | 190 mA (Ta) |
| Power Dissipation (Pd) | — | 1 W (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | — | 2.8 V, 10 V |
| Rds On (Max) @ Id, Vgs | — | [DATA_NEEDED: Rds On max @ Vgs] |
| Vgs(th) (Max) | — | [DATA_NEEDED: gate threshold voltage max] |
| Vgs(th) (Typ) | — | [DATA_NEEDED: gate threshold voltage typ] |
| 동작 온도 범위 | — | [DATA_NEEDED: Tj max / operating temp] |
| Series | — | SIPMOS Small-Signal-Transistor |
| Part Status | — | Active |
| RoHS 상태 | — | [DATA_NEEDED: explicit RoHS status from datasheet] |