BSP89H6327XTSA1 vs BSR316PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP89H6327XTSA1 von Infineon und BSR316PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP89H6327XTSA1 | BSR316PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,39 | $0,22 |
| Transistortyp | N-Channel MOSFET, enhancement mode | — |
| Technology | SIPMOS (planar power MOS) | — |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 240 V (VGS=0, ID=250 µA) | — |
| Continuous Drain Current (ID) at Ta=25°C | 0.35 A | — |
| Total Power Dissipation (Ptot) at Ta=25°C | 1.8 W (on FR4 PCB, 6 cm² cooling area) | — |
| On-State Resistance (RDS(on)) max | 6 Ω (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Betriebstemperaturbereich | -55 °C to +150 °C (Tj) | -55 C to +150 C (junction) |
| Thermal Resistance Junction-Ambient (RthJA) | 70 K/W (6 cm² PCB) | — |
| Thermal Resistance Junction-Solder Point (RthJS) | 25 K/W | — |
| Gehäuse | PG-SOT223-4 (SOT-223, 4-pin with tab) | PG-SC59-3 (SC-59 / SOT-23 equivalent) |
| Montageart | Surface Mount | Surface Mount |
| Logic-Level Gate Drive | Yes (logic-level compatible) | — |
| dv/dt Rated | Yes | — |
| ESD Protection | Internal gate-source Zener | — |
| Automotive Qualification | AEC-Q101 (per ordering code H6327) | — |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSR316PH6327XTSA1 |
| Series | — | OptiMOS |
| FET Type | — | P-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TA | — | -360 mA |
| Continuous Drain Current (ID) at TC | — | [DATA_NEEDED: ID at TC specific value] |
| On-State Resistance RDS(on) max | — | 1800 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | — | -1.7 V typical, -2.5 V max |
| Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (Tc) | — | 500 mW |
| Qualification | — | Automotive |
| MSL-Level | — | 1 |
| Polarity | — | P-Channel |