BSP89H6327XTSA1 vs BSR316PH6327XTSA1 Comparación
Comparación detallada lado a lado de BSP89H6327XTSA1 por Infineon y BSR316PH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSP89H6327XTSA1 | BSR316PH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,39 | $0,22 |
| Tipo de transistor | N-Channel MOSFET, enhancement mode | — |
| Technology | SIPMOS (planar power MOS) | — |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 240 V (VGS=0, ID=250 µA) | — |
| Continuous Drain Current (ID) at Ta=25°C | 0.35 A | — |
| Total Power Dissipation (Ptot) at Ta=25°C | 1.8 W (on FR4 PCB, 6 cm² cooling area) | — |
| On-State Resistance (RDS(on)) max | 6 Ω (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C (Tj) | -55 C to +150 C (junction) |
| Thermal Resistance Junction-Ambient (RthJA) | 70 K/W (6 cm² PCB) | — |
| Thermal Resistance Junction-Solder Point (RthJS) | 25 K/W | — |
| Encapsulado | PG-SOT223-4 (SOT-223, 4-pin with tab) | PG-SC59-3 (SC-59 / SOT-23 equivalent) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Logic-Level Gate Drive | Yes (logic-level compatible) | — |
| dv/dt Rated | Yes | — |
| ESD Protection | Internal gate-source Zener | — |
| Automotive Qualification | AEC-Q101 (per ordering code H6327) | — |
| Estado RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSR316PH6327XTSA1 |
| Series | — | OptiMOS |
| FET Type | — | P-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TA | — | -360 mA |
| Continuous Drain Current (ID) at TC | — | [DATA_NEEDED: ID at TC specific value] |
| On-State Resistance RDS(on) max | — | 1800 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | — | -1.7 V typical, -2.5 V max |
| Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (Tc) | — | 500 mW |
| Qualification | — | Automotive |
| Nivel MSL | — | 1 |
| Polarity | — | P-Channel |