BSR316PH6327XTSA1 vs BSP125H6433XTMA1 Vergleich

Detaillierter Direktvergleich von BSR316PH6327XTSA1 von Infineon und BSP125H6433XTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
BSP125H6433XTMA1 BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon

BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon

BSP125H6433XTMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter BSR316PH6327XTSA1 BSP125H6433XTMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,22 $1,05
Manufacturer Infineon Technologies —
Part Number BSR316PH6327XTSA1 —
Series OptiMOS —
FET Type P-Channel Enhancement Mode N-Channel Enhancement Mode
Drain-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at TA -360 mA 120 mA
Continuous Drain Current (ID) at TC [DATA_NEEDED: ID at TC specific value] —
On-State Resistance RDS(on) max 1800 mOhm at VGS = -10 V —
Gate Threshold Voltage VGS(th) -1.7 V typical, -2.5 V max —
Gate Charge Qg [DATA_NEEDED: Qg total] —
Power Dissipation (Tc) 500 mW —
Gehäuse PG-SC59-3 (SC-59 / SOT-23 equivalent) PG-SOT223-4 (3+tab)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55 C to +150 C (junction) -55C to +150C (TJ)
Qualification Automotive —
RoHS-Status Compliant Compliant
MSL-Level 1 —
Polarity P-Channel —
Drain-Source Voltage (V(BR)DSS) — 600 V
Power Dissipation (PD) at TA — 1.8 W
Automotive Qualification — AEC-Q101
Lead Plating — Pb-free
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: total Qg]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Thermal Resistance RthJA — [DATA_NEEDED: theta_JA on standard PCB]
Configuration — Single N-Channel MOSFET

Datenblätter & Ressourcen

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