BSR316PH6327XTSA1 vs BSP125H6433XTMA1 对比
详细并排对比 BSR316PH6327XTSA1 出自 Infineon 和 BSP125H6433XTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSR316PH6327XTSA1 | BSP125H6433XTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.22 | $1.05 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSR316PH6327XTSA1 | — |
| Series | OptiMOS | — |
| FET Type | P-Channel Enhancement Mode | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TA | -360 mA | 120 mA |
| Continuous Drain Current (ID) at TC | [DATA_NEEDED: ID at TC specific value] | — |
| On-State Resistance RDS(on) max | 1800 mOhm at VGS = -10 V | — |
| Gate Threshold Voltage VGS(th) | -1.7 V typical, -2.5 V max | — |
| Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| Power Dissipation (Tc) | 500 mW | — |
| 封装 | PG-SC59-3 (SC-59 / SOT-23 equivalent) | PG-SOT223-4 (3+tab) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +150 C (junction) | -55C to +150C (TJ) |
| Qualification | Automotive | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | — |
| Polarity | P-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | — | 600 V |
| Power Dissipation (PD) at TA | — | 1.8 W |
| Automotive Qualification | — | AEC-Q101 |
| Lead Plating | — | Pb-free |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total Qg] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Thermal Resistance RthJA | — | [DATA_NEEDED: theta_JA on standard PCB] |
| Configuration | — | Single N-Channel MOSFET |