BSR316PH6327XTSA1 vs BSP129H6327XTSA1 Vergleich

Detaillierter Direktvergleich von BSR316PH6327XTSA1 von Infineon und BSP129H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSR316PH6327XTSA1 BSP129H6327XTSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,22 $0,30
Manufacturer Infineon Technologies —
Part Number BSR316PH6327XTSA1 —
Series OptiMOS —
FET Type P-Channel Enhancement Mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) -100 V 240 V
Continuous Drain Current (ID) at TA -360 mA —
Continuous Drain Current (ID) at TC [DATA_NEEDED: ID at TC specific value] —
On-State Resistance RDS(on) max 1800 mOhm at VGS = -10 V —
Gate Threshold Voltage VGS(th) -1.7 V typical, -2.5 V max —
Gate Charge Qg [DATA_NEEDED: Qg total] —
Power Dissipation (Tc) 500 mW —
Gehäuse PG-SC59-3 (SC-59 / SOT-23 equivalent) PG-SOT223-4 (SOT-223, 3+Tab)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55 C to +150 C (junction) —
Qualification Automotive —
RoHS-Status Compliant Compliant
MSL-Level 1 [DATA_NEEDED: MSL rating]
Polarity P-Channel —
Continuous Drain Current (ID) at TA=25C — 350 mA
On-Resistance RDS(on) max — 4.2 ohm (some sources 6 ohm)
Power Dissipation (PD) at TA=25C — 1.8 W
Betriebstemperatur — -55 C to +150 C (junction)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) — [DATA_NEEDED: depletion threshold VGS(off)]
dv/dt Ruggedness — Yes (rated)
Automotive Qualification — AEC-Q101 qualified
Lead-Free — Yes
Process Technology — SIPMOS (vertical DMOS)
Drain Terminal — Tab (pin 4)

Datenblätter & Ressourcen

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