BSR316PH6327XTSA1 vs BSP129H6327XTSA1 비교

다음의 상세 나란히 비교: BSR316PH6327XTSA1 제조: Infineon 및 BSP129H6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSR316PH6327XTSA1 BSR316PH6327XTSA1 - 100V P-Ch MOSFET 360mA SC-59 | Infineon

BSR316PH6327XTSA1 - 100V P-Ch MOSFET 360mA SC-59 | Infineon

BSR316PH6327XTSA1 ✓ 활성

사양 비교

파라미터 BSR316PH6327XTSA1 BSP129H6327XTSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.22 $0.30
Manufacturer Infineon Technologies —
Part Number BSR316PH6327XTSA1 —
Series OptiMOS —
FET Type P-Channel Enhancement Mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) -100 V 240 V
Continuous Drain Current (ID) at TA -360 mA —
Continuous Drain Current (ID) at TC [DATA_NEEDED: ID at TC specific value] —
On-State Resistance RDS(on) max 1800 mOhm at VGS = -10 V —
Gate Threshold Voltage VGS(th) -1.7 V typical, -2.5 V max —
Gate Charge Qg [DATA_NEEDED: Qg total] —
Power Dissipation (Tc) 500 mW —
패키지 PG-SC59-3 (SC-59 / SOT-23 equivalent) PG-SOT223-4 (SOT-223, 3+Tab)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55 C to +150 C (junction) —
Qualification Automotive —
RoHS 상태 Compliant Compliant
MSL 레벨 1 [DATA_NEEDED: MSL rating]
Polarity P-Channel —
Continuous Drain Current (ID) at TA=25C — 350 mA
On-Resistance RDS(on) max — 4.2 ohm (some sources 6 ohm)
Power Dissipation (PD) at TA=25C — 1.8 W
동작 온도 — -55 C to +150 C (junction)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) — [DATA_NEEDED: depletion threshold VGS(off)]
dv/dt Ruggedness — Yes (rated)
Automotive Qualification — AEC-Q101 qualified
Lead-Free — Yes
Process Technology — SIPMOS (vertical DMOS)
Drain Terminal — Tab (pin 4)

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