BSS126H6327XTSA2 vs BSS123NH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS126H6327XTSA2 von Infineon und BSS123NH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS126H6327XTSA2 | BSS123NH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,32 | $0,09 |
| FET Type | N-Channel Depletion Mode | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | 600 V | — |
| Continuous Drain Current (ID) at Ta | 21 mA | — |
| Power Dissipation (PD) at Ta | 500 mW | — |
| On-Resistance (RDS(on)) Max | 500 ohm (typical for depletion-mode) | — |
| Gate-Source Voltage (VGS) Range | [DATA_NEEDED: VGS max/min] | — |
| Technology | SIPMOS (DMOS) | — |
| Gehäuse | SOT-23-3 (PG-SOT23) | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction, typical) | -55 °C to +150 °C (junction) |
| Pin-Anzahl | 3 | — |
| Configuration | Single | — |
| Channel Mode | Depletion (normally-on at VGS = 0) | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| Halogenfrei | Yes (Infineon 'green' package) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS123NH6327XTSA1 |
| Part Status | — | Active |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 190 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| RDS(on) Max | — | 6 Ω @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and max VGS(th)] |
| Gate-Source Voltage Max (VGS) | — | ±20 V |
| Qualification | — | AEC-Q101 (automotive) |
| RoHS Compliance | — | Yes (Pb-free lead plating) |