BSS138NH6327XTSA2 vs 2N7002-7-F Vergleich
Detaillierter Direktvergleich von BSS138NH6327XTSA2 von Infineon und 2N7002-7-F von Diodes Incorporated. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Diodes Incorporated
2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated
2N7002-7-F ✓ AktivSpezifikationsvergleich
| Parameter | BSS138NH6327XTSA2 | 2N7002-7-F |
|---|---|---|
| Marke | Infineon | Diodes Incorporated |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,15 | $0,08 |
| Polarity | N-Channel | — |
| Operating Mode | Enhancement | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 60 V | — |
| R_DS(on) max @ V_GS=10V | 3.5 ohm | — |
| Continuous Drain Current (Ta) | 230 mA | — |
| Power Dissipation (Ta) | 360 mW | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: typical V_GS(th) value] | — |
| Gehäuse | PG-SOT-23 (3-pin) | SOT-23-3 (TO-236) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj max and operating range] | [DATA_NEEDED: Tj / TA operating range] |
| Gate-Source Voltage V_GS max | ±20 V | — |
| dv/dt Rated | Yes | — |
| Halogenfrei | Yes (per IEC 61249-2-21) | — |
| RoHS Compliance | Compliant | — |
| AEC-Q101 Qualification | Qualified | — |
| Lead Plating | Pb-free | — |
| Marking Code | [DATA_NEEDED: top-side marking code] | — |
| Packaging | Tape and Reel | — |
| Transistortyp | — | N-Channel Enhancement-Mode MOSFET |
| Drain-Source Voltage (VDS max) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 115 mA |
| Continuous Drain Current Range (per Mouser listing) | — | 105 mA to 210 mA |
| Power Dissipation (PD) at Ta | — | 370 mW |
| On-Resistance RDS(on) | — | 7.5 ohm to 13.5 ohm |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge typical] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| RoHS-Status | — | Compliant |
| Terminal Finish | — | Matte tin (solderable per MIL-STD-202, method 208) |
| Channel Mode | — | Enhancement |
| Technology | — | Trench MOSFET |