BSS138NH6327XTSA2 vs 2N7002-7-F Comparaison
Comparaison détaillée côte à côte de BSS138NH6327XTSA2 par Infineon et 2N7002-7-F par Diodes Incorporated. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Diodes Incorporated
2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated
2N7002-7-F ✓ ActifComparaison des spécifications
| Paramètre | BSS138NH6327XTSA2 | 2N7002-7-F |
|---|---|---|
| Marque | Infineon | Diodes Incorporated |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,15 | $0,08 |
| Polarity | N-Channel | — |
| Operating Mode | Enhancement | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 60 V | — |
| R_DS(on) max @ V_GS=10V | 3.5 ohm | — |
| Continuous Drain Current (Ta) | 230 mA | — |
| Power Dissipation (Ta) | 360 mW | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: typical V_GS(th) value] | — |
| Boîtier | PG-SOT-23 (3-pin) | SOT-23-3 (TO-236) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | [DATA_NEEDED: Tj max and operating range] | [DATA_NEEDED: Tj / TA operating range] |
| Gate-Source Voltage V_GS max | ±20 V | — |
| dv/dt Rated | Yes | — |
| Sans halogène | Yes (per IEC 61249-2-21) | — |
| RoHS Compliance | Compliant | — |
| AEC-Q101 Qualification | Qualified | — |
| Lead Plating | Pb-free | — |
| Marking Code | [DATA_NEEDED: top-side marking code] | — |
| Packaging | Tape and Reel | — |
| Type de transistor | — | N-Channel Enhancement-Mode MOSFET |
| Drain-Source Voltage (VDS max) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 115 mA |
| Continuous Drain Current Range (per Mouser listing) | — | 105 mA to 210 mA |
| Power Dissipation (PD) at Ta | — | 370 mW |
| On-Resistance RDS(on) | — | 7.5 ohm to 13.5 ohm |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge typical] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Statut RoHS | — | Compliant |
| Terminal Finish | — | Matte tin (solderable per MIL-STD-202, method 208) |
| Channel Mode | — | Enhancement |
| Technology | — | Trench MOSFET |