BSS205NH6327XTSA1 vs BSS169H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS205NH6327XTSA1 von Infineon und BSS169H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS205NH6327XTSA1 | BSS169H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,12 | $0,15 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS205NH6327XTSA1 | — |
| Transistortyp | N-Channel MOSFET | — |
| Gehäuse | PG-SOT23 (SC-59, TO-236-3), 3-pin | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Drain-Source Voltage V<sub>DS</sub> | 20 V | — |
| Continuous Drain Current I<sub>D</sub> (Ta) | 2.5 A | — |
| Power Dissipation P<sub>D</sub> (Ta) | 500 mW | — |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) | 85 mΩ | — |
| Gate Threshold V<sub>GS(th)</sub> | [DATA_NEEDED: Vgs(th) typical value] | — |
| Betriebstemperaturbereich | -55 °C to +150 °C (junction) | [DATA_NEEDED: junction/ambient operating temperature range] |
| Gate Drive Voltage | Logic-level compatible | — |
| Qualification | AEC-Q101 | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) | — |
| Packaging | Tape & Reel (H6327) | — |
| FET Type | — | N-Channel Depletion Mode |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 170 mA (Ta) |
| Power Dissipation (PD) | — | 360 mW (Ta) |
| RDS(on) Maximum | — | 6 Ohm at VGS=0 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS absolute maximum rating] |
| Gate Threshold Voltage (VGS(th)) | — | Pinch-off approx. -3.5 V (typical) |
| Pin-Anzahl | — | 3 |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| Technology | — | Depletion-mode vertical DMOS |
| Drain Current at 25C | — | 170 mA continuous |
| Typical RDS(on) | — | [DATA_NEEDED: typical RDS(on) value] |