BSS214NH6327XTSA1 vs BSS806NEH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS214NH6327XTSA1 von Infineon und BSS806NEH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS214NH6327XTSA1 | BSS806NEH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,09 | $0,14 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 20 V | 20 V (maximum) |
| Continuous Drain Current (ID) | 1.5 A (Ta) | 2.3 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 500 mW (Ta) |
| Drain-Source On-Resistance (RDS(on) max) | 250 mOhm at VGS = 4.5 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| Gate-Source Voltage (VGS max) | ±12 V (recommended) | — |
| Technology | OptiMOS 2 (planar N-channel) | — |
| Gehäuse | SOT-23 (PG-SOT23), 3 pins | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | [DATA_NEEDED: operating temperature range] |
| Qualification | AEC-Q101 (Automotive) | — |
| Lead Finish | Pb-free lead plating (matte tin) | — |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| ESD Protection | Yes (gate ESD diode) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS806NEH6327XTSA1 |
| Transistortyp | — | N-Channel MOSFET |
| Mode of Operation | — | Enhancement-mode |
| On-Resistance RDS(on) | — | 57 mOhm (maximum) |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Yes (compliant) |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |