BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon
Teilenummer: BSS214NH6327XTSA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.36 | $3,60 |
| 100 | $0.21 | $21,00 |
| 500 | $0.16 | $80,00 |
| 1.000 | $0.12 | $120,00 |
| 3.000 | $0.09 | $270,00 |
BSS214NH6327XTSA1 Übersicht
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch where a positive gate-source voltage creates an n-type conduction channel between drain and source. As a small-signal MOSFET in the broader discrete-semiconductor hierarchy, it sits under power MOSFETs, which themselves are a sub-category of discrete transistors. Low-threshold, logic-level variants like the BSS214N are designed to be driven directly from 3.3 V or 5 V microcontroller GPIO pins without a separate gate driver stage.
The key features include a logic-level gate threshold (VGS(th) in the sub-2 V range), 250 mOhm maximum RDS(on) at 4.5 V VGS, low gate charge enabling fast switching transitions, and an integrated ESD protection diode on the gate. The 20 V VDS rating makes it suitable for low-voltage bus switching such as USB (5 V), 12 V battery systems, and point-of-load rails below 15 V. The OptiMOS 2 technology provides a favorable FOM (RDS(on) x Qg) for its class.
Architecturally, the BSS214N uses Infineon's planar OptiMOS 2 cell design, which reduces gate charge and conduction loss relative to older TrenchMOS generations. The SOT-23 package's exposed lead frame allows modest thermal dissipation to copper pads, supporting up to 500 mW continuous dissipation on a standard 1 oz JEDEC EIA/JESD51 FR4 test board.
Typical applications include load switching in USB ports, battery management systems, power-rail multiplexing, DC-DC converter synchronous-rectifier low-side switches, and motor-driver low-side stages in small fans or pumps. Automotive body electronics and industrial sensor interfaces also benefit from the AEC-Q101 qualification.
When designing with this part, observe the SOA derating for pulsed currents above 1.5 A and ensure that the VGS drive voltage does not exceed the maximum rating. The SOT-23 footprint requires thermal copper-pad design to sustain continuous 500 mW; thermal vias under the drain pad are recommended.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für BSS214NH6327XTSA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit BSS214NH6327XTSA1 (gleiche Bauform und Footprint) – abweichend in Package, Drain-Source Voltage (VDS), Technology, Operating Temperature Range, Continuous Drain Current (ID).
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
BSS214NWH6327
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
BSS214NH6327
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
BSS308PEH6327XTSA1
✅ Drop-In✓ Auf Lager
$0.11 / Stück
Datenblatt ansehen →BSS816NWH6327XTSA1
✅ Drop-In✓ Auf Lager
$0.14 / Stück
Datenblatt ansehen →BSS806NH6327XTSA1
✅ Drop-In✓ Auf Lager
$0.19 / Stück
Datenblatt ansehen →2N7002H6327XTSA2
✅ Drop-In✓ Auf Lager
$0.08 / Stück
Datenblatt ansehen →BSS214NH6327XTSA1 Grenzwerte & elektrische Eigenschaften
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 20 V |
| Continuous Drain Current (ID) | 1.5 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) |
| Drain-Source On-Resistance (RDS(on) max) | 250 mOhm at VGS = 4.5 V |
| Gate-Source Voltage (VGS max) | ±12 V (recommended) |
| Technology | OptiMOS 2 (planar N-channel) |
| Gehäuse | SOT-23 (PG-SOT23), 3 pins |
| Montageart | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) |
| Qualification | AEC-Q101 (Automotive) |
| Lead Finish | Pb-free lead plating (matte tin) |
| RoHS-Status | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) |
| ESD Protection | Yes (gate ESD diode) |
BSS214NH6327XTSA1 Pin-Konfiguration
| Pin 1 | GATE — Gate input - logic-level drive, 3.3V or 5V compatible |
| Pin 2 | SOURCE — Source - typically connected to GND for low-side switching |
| Pin 3 | DRAIN — Drain - load connection; tab/lead-3 also connects to drain for thermal dissipation |
Sicherer Arbeitsbereich (DC, Ta=25C)
Typische Anwendungen
BSS214NH6327XTSA1 ist geeignet für 6 Anwendungs: USB VBUS Load Switch, Battery Management Load Disconnect, LED Driver Low-Side Switch, DC-DC Converter Synchronous Rectifier, Automotive Body Electronics Relay Replacement, Industrial Sensor Power Multiplexing.
USB VBUS Load Switch
The BSS214NH6327XTSA1 fits USB VBUS load switching because its 20 V VDS comfortably exceeds the 5 V USB rail, and the 1.5 A continuous current covers USB 2.0/3.0 downstream port requirements. Its 250 mOhm RDS(on) at 4.5 V VGS produces only ~38 mW loss at 0.5 A, well below the 500 mW package limit. Place the FET between the 5 V supply and the connector with a 100 kOhm gate pull-down to define the off-state; a 10 kOhm series gate resistor controls the 1-2 ns rise time. Unlike a P-channel MOSFET, no charge pump is required - the logic-level gate drives directly from a 3.3 V or 5 V GPIO. AEC-Q101 qualification suits automotive USB chargers and infotainment ports.
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Battery Management Load Disconnect
In single-cell Li-ion battery management, the BSS214NH6327XTSA1 serves as a low-side load disconnect switch because its 20 V VDS is well above the 4.2 V maximum battery voltage, and the 1.5 A rating covers typical handheld load profiles. The 250 mOhm RDS(on) limits full-load conduction loss to about 0.56 W at 1.5 A - usable within the SOT-23's 500 mW thermal limit only with a small drain copper pour. Drive the gate from the battery management MCU's GPIO at 3.3 V; the logic-level threshold ensures full enhancement. AEC-Q101 makes the part attractive for e-bike BMS and 12 V automotive accessory circuits, where wide operating temperature and reliability margin are required.
Empfohlen
LED Driver Low-Side Switch
The BSS214NH6327XTSA1 works as a low-side PWM driver for LED strings up to 1.5 A per channel, where its fast switching transitions and low gate charge minimize driver-stage losses. With VGS driven at 5 V from a logic-level timer IC, the FET achieves 250 mOhm RDS(on) and supports PWM dimming frequencies to 20 kHz without significant switching loss. Place a 10 kOhm gate resistor to limit ringing, and use the drain copper pour as the heatsink - 1 oz copper gives roughly 250 C/W junction-to-ambient thermal resistance. AEC-Q101 qualification allows under-hood automotive lighting and brake-light driver designs where temperature swings exceed consumer-grade requirements.
Empfohlen
DC-DC Converter Synchronous Rectifier
In low-power buck converters below 1.5 A, the BSS214NH6327XTSA1 acts as a low-side synchronous rectifier, where its low gate charge and 250 mOhm RDS(on) minimize body-diode conduction loss during the dead-time interval. Operate it at switching frequencies up to 500 kHz; above that the gate charge (~1-2 nC typical) starts to dominate driver losses. Pair with a complementary P-channel high-side switch or a dedicated controller such as a TPS54360; drive the gate through a 4.7 kOhm resistor to control dV/dt. The 20 V VDS rating is suitable for 5 V and 12 V input rails but should not be used above 15 V continuous to stay within SOA.
Empfohlen
Automotive Body Electronics Relay Replacement
The BSS214NH6327XTSA1 replaces small automotive relays in body-electronics applications such as seat heaters, mirror heaters, and interior lighting because it provides silent, bounce-free switching with no moving parts. Its 1.5 A continuous and 20 V ratings handle typical 12 V body loads up to ~18 W per channel. The AEC-Q101 qualification and -55C to +150C operating range exceed the under-hood and cabin temperature extremes. Drive the gate from a BCM (body control module) low-side driver output at 5 V; no flyback diode is needed for resistive loads, though an inductive load requires an external freewheel diode. Compared to a 12 V automotive relay, this MOSFET solution saves PCB area and eliminates audible click noise.
Empfohlen
Industrial Sensor Power Multiplexing
Industrial sensor systems often power-multiplex multiple sensors onto a single ADC channel to reduce wire count and ADC cost; the BSS214NH6327XTSA1 serves this role as a low-side multiplexer switch because of its low on-resistance (250 mOhm) and fast switching. Its 20 V VDS easily handles 24 V industrial supply rails derated for switching transients. The 1.5 A current rating supports even power-hungry sensors such as 4-20 mA loop-powered transmitters at full scale. The logic-level gate threshold allows direct drive from a 3.3 V microcontroller or FPGA without a level shifter. Place a small RC snubber (100 ohm + 1 nF) across drain-source if the load has significant inductance.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für BSS214NH6327XTSA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | BSS214NWH6327 | BSS214NH6327 | BSS308PEH6327XTSA1 | BSS816NWH6327XTSA1 | BSS806NH6327XTSA1 | 2N7002H6327XTSA2 |
|---|---|---|---|---|---|---|---|
| Package | SOT-23-3 (PG-SOT23) | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Polarity | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 20 V | 20 V | 20 V | 30 V | 20 V | 20 V | 60 V |
| Continuous Drain Current (ID) | 1.5 A | 1.5 A | 1.5 A | 2 A | 1.4 A | 2.3 A | 0.2 A |
| RDS(on) max at 4.5V VGS | 250 mOhm | 250 mOhm | 250 mOhm | 150 mOhm (P-ch) | 180 mOhm | 70 mOhm | 5 Ohm (at 10V) |
| Power Dissipation | 500 mW | 500 mW | 500 mW | 500 mW | 500 mW | 500 mW | 360 mW |
| AEC-Q101 Qualification | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Approx. Unit Price (qty 1000) | $0.12 | $0.13 | $0.13 | $0.18 | $0.14 | $0.22 | $0.03 |
Wichtigste Unterscheidungsmerkmale
- Higher continuous current than 2N7002 family in same footprint (vs. 2N7002H6327XTSA2)
- Lower RDS(on) than comparable N-channel SOT-23 parts (vs. BSS816NWH6327XTSA1)
- Automotive-grade qualification with broad distributor availability (vs. BSS806NH6327XTSA1)
Designhinweise
Estimated: at ID = 1.5 A and RDS(on) = 250 mOhm, conduction loss is P = I^2 x R = 1.5^2 x 0.25 = 0.56 W. The SOT-23 package has a typical theta_JA of ~250 C/W on a JEDEC EIA/JESD51 1 oz FR4 board, producing a junction temperature rise of 0.56 x 250 = 140 C above ambient - this exceeds the 150 C Tj limit at 25 C ambient. Either reduce continuous current to ~1.0 A, or enlarge the drain-pad copper pour (4 cm^2 or larger) to lower theta_JA to ~150 C/W. For pulsed loads, calculate transient thermal impedance from the datasheet's Z(th) curves.
The SOT-23-3 drain pad (lead 3) doubles as the primary thermal dissipation path. Use a minimum 4 mm^2 copper pour connected to lead 3 on the top layer, plus an array of 4-9 thermal vias (0.3 mm drill, 0.5 mm pad) to a bottom-layer copper plane. Keep the source and gate copper minimal to reduce parasitic source inductance which can cause gate-oscillation during fast switching. Place the gate resistor (typically 4.7-10 kOhm) within 3 mm of the gate pin to dampen the gate-source loop.
Avoid driving the gate above the maximum VGS rating of ±20 V (or per datasheet value); ESD events on long gate traces can punch through the thin gate oxide. Add a 10 kOhm pull-down on the gate to ensure the FET stays off during MCU reset. Do not assume the BSS214N is pin-compatible with all 3-pin SOT-23 parts - some competitors (and even some 2N7002 clones) use a gate-drain-source pin order rather than the gate-source-drain order used here; always verify the mechanical drawing before PCB layout.
For switching applications above 100 kHz, keep the high-current drain-source loop area as small as possible to minimize parasitic inductance that causes voltage ringing and potential VDS over-voltage. Place input bypass capacitors (typically 100 nF ceramic) within 2 mm of the drain and source pins. If the BSS214N switches an inductive load (relay coil, motor, solenoid), add a freewheel diode across the load - the FET's body diode is too slow and has high forward voltage for inductive kickback protection above 100 mA.
Compliance-Informationen
AEC-Q101 qualified (the automotive-standard for discrete semiconductors, distinct from AEC-Q100 which targets ICs). RoHS compliant per Infineon product page. Pb-free matte-tin lead finish. Halogen-free per Infineon declaration. MSL Level 1 per JEDEC J-STD-020.
