BSS214NWH6327XTSA1 vs BSL606SNH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS214NWH6327XTSA1 von Infineon und BSL606SNH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS214NWH6327XTSA1 | BSL606SNH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,15 | $0,19 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS214NWH6327XTSA1 | — |
| Series | OptiMOS | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS3 trench MOSFET |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (Id) @ 25C | 1.5 A | — |
| Rds(on) Max @ Vgs=4.5V | 250 mOhm | — |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | — |
| Power Dissipation (Pd) @ Ta=25C | 500 mW | — |
| Gehäuse | PG-SOT323 (SOT-323-3) | PG-TSOP6-6 (6-pin, SOT-23-6 compatible) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +150C (junction) | — |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| RoHS-Status | Compliant | Compliant (Pb-free plating) |
| Lead-Free | Yes | — |
| Transistortyp | — | N-Channel MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 4.5 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 60 mOhm (max, VGS = 10 V) |
| Total Power Dissipation (PD) at Ta | — | 2 W |
| Gate-Source Voltage (VGS) | — | +/-20 V (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Total Gate Charge (Qg) | — | 5.6 nC (max) |
| Betriebstemperaturbereich | — | -55C to +150C (Tj) |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |