BSS306NH6327XTSA1 vs BSS316NH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS306NH6327XTSA1 von Infineon und BSS316NH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS306NH6327XTSA1 | BSS316NH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,14 | $0,13 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS306NH6327XTSA1 | — |
| Part Family | BSS306N (OptiMOS Small Signal) | — |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Technology | MOSFET (Metal Oxide) | OptiMOS 2 (Trench) |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) | 2.3 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| RDS(on) max | [DATA_NEEDED: exact RDS(on) max value in mΩ] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max in V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) in V] | — |
| Gehäuse | SOT-23 (PG-SOT23), 3-pin | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55°C to +150°C (TJ) | — |
| Qualification | AEC-Q101 (Automotive) | — |
| Lead Plating | Pb-free (RoHS compliant) | Pb-free (Matte Tin) |
| Configuration | Single N-Channel, 3-pin | — |
| Continuous Drain Current (ID) at TA=25C | — | 1.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance RDS(on) max | — | 160 mOhm at VGS=10V, ID=1.4A |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V at ID=3.7 uA |
| Total Gate Charge (Qg) | — | 600 pC at VGS=5 V |
| Input Capacitance (Ciss) | — | 94 pF at VDS=15 V |
| Output Capacitance (Coss) | — | [DATA_NEEDED: output capacitance] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: reverse transfer capacitance] |
| Maximum Power Dissipation (PD) at TA=25C | — | 500 mW |
| Betriebs-Sperrschichttemperaturbereich | — | -55 C to +150 C |
| MSL-Level | — | MSL1 (per JEDEC J-STD-020) |
| RoHS-Status | — | Compliant |
| Automotive Qualification | — | AEC-Q101 qualified |