BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon
Teilenummer: BSS316NH6327XTSA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.45 | $0,45 |
| 10 | $0.39 | $3,90 |
| 100 | $0.28 | $28,00 |
| 500 | $0.21 | $105,00 |
| 1.000 | $0.17 | $170,00 |
| 3.000 | $0.13 | $390,00 |
BSS316NH6327XTSA1 Übersicht
A small-signal N-channel MOSFET is a voltage-controlled majority-carrier device in which applying a positive gate-to-source voltage above the threshold creates an inversion-layer channel that conducts current between drain and source. The "small signal" designation implies sub-2A continuous drain current, optimized gate charge, and a SOT-23-style package intended for PCB-side switching rather than power-stage conduction. Within the broader taxonomy, the BSS316N sits between discrete transistors and dedicated power MOSFETs: discrete semiconductor -> MOSFET -> N-channel MOSFET -> small-signal/OptiMOS family -> OptiMOS 2 30V class.
Key features of the BSS316NH6327XTSA1 include a 30V drain-source breakdown voltage, 160 mOhm maximum RDS(on) at VGS=10V, a total gate charge (Qg) of 600 pC at VGS=5V, an input capacitance (Ciss) of 94 pF at VDS=15V, and 500 mW maximum power dissipation at TA=25C. The 3-pin PG-SOT23 package has a low thermal resistance and supports reflow soldering to standard JEDEC J-STD-020 profiles. Pb-free lead plating makes the part RoHS compliant, and AEC-Q101 qualification extends use into automotive electronics.
The OptiMOS 2 technology uses an advanced trench-cell process that minimizes cell pitch and reduces both on-resistance per unit area and gate charge. The result is a low FOM (RDS(on) x Qg) figure, which translates into lower conduction and switching losses. Combined with the 30V rating, this cell architecture is well-suited to 12V automotive and 5V/12V industrial rails.
Typical applications include load switching in battery-powered portable devices, high-side/low-side switches in DC-DC converter modules, USB power path management, LED backlight driving, and automotive body-electronics modules such as ECU outputs and small motor drivers. The part is also widely used as a generic high-speed level shifter or signal relay in mixed-signal designs.
When designing with the BSS316N, place the gate-drive resistor as close to the gate pin as possible to limit ringing, and ensure VGS is fully driven above the threshold for low RDS(on). For switching loads above 100 kHz, account for the 600 pC Qg when sizing the gate driver.
This page synthesizes distributor pricing, verified drop-in alternatives, AEC-Q101 compliance, and practical PCB-layout notes not collected in any single Infineon datasheet section.
Drop-in-Alternativen für BSS316NH6327XTSA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit BSS316NH6327XTSA1 (gleiche Bauform und Footprint) – abweichend in Package, Technology, Operating Temperature Range, MSL Level, Configuration.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
BSS306NH6327XTSA1
✅ Drop-In✓ Auf Lager
$0.14 / Stück
Datenblatt ansehen →BSS214NH6327XTSA1
✅ Drop-In✓ Auf Lager
$0.09 / Stück
Datenblatt ansehen →BSS816NWH6327XTSA1
✅ Drop-In✓ Auf Lager
$0.14 / Stück
Datenblatt ansehen →BSS308PEH6327XTSA1
✅ Drop-In✓ Auf Lager
$0.11 / Stück
Datenblatt ansehen →IRLML6346TRPBF
✅ Drop-In✓ Auf Lager
$0.18 / Stück
Datenblatt ansehen →BSS316NH6327XTSA1 Grenzwerte & elektrische Eigenschaften
| FET Type | N-Channel, Enhancement Mode |
| Technology | OptiMOS 2 (Trench) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A |
| Drain-Source On-Resistance RDS(on) max | 160 mOhm at VGS=10V, ID=1.4A |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V at ID=3.7 uA |
| Total Gate Charge (Qg) | 600 pC at VGS=5 V |
| Input Capacitance (Ciss) | 94 pF at VDS=15 V |
| Maximum Power Dissipation (PD) at TA=25C | 500 mW |
| Betriebs-Sperrschichttemperaturbereich | -55 C to +150 C |
| Gehäuse | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount |
| Lead Plating | Pb-free (Matte Tin) |
| MSL-Level | MSL1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant |
| Automotive Qualification | AEC-Q101 qualified |
BSS316NH6327XTSA1 Pin-Konfiguration
| Pin 1 | Gate — Gate control input (driven high to turn on) |
| Pin 2 | Source — Source terminal (typically connected to GND for low-side switch) |
| Pin 3 | Drain — Drain terminal (load connection for low-side switch) |
Sicherer Arbeitsbereich (TA=25C, PG-SOT23)
Typische Anwendungen
BSS316NH6327XTSA1 ist geeignet für 6 Anwendungs: 12V Automotive Load Switching, USB VBUS Power Path Switching, Battery Protection / Low-Side Switch, DC-DC Converter Synchronous Rectifier, LED Backlight & Indicator Driver, Industrial Logic-Level Relay Replacement.
12V Automotive Load Switching
The BSS316NH6327XTSA1 is a strong fit for 12V automotive body-electronics load switches because its 30V VDS rating covers the 12V nominal bus with healthy margin for 24V jump-start and 35V load-dump transients specified by ISO 7637-2. The 160 mOhm RDS(on) at VGS=10V dissipates only ~225 mW at 1.2A continuous load, comfortably inside the 500 mW PG-SOT23 envelope. AEC-Q101 qualification plus the -55C to +150C junction range let designers drop the part directly into ECU output stages, headlamp-driver logic switches, and door-module relay replacements. Unlike a mechanical relay, this MOSFET switches in <100 ns and draws zero steady-state coil current, reducing quiescent drain on the battery.
Empfohlen
USB VBUS Power Path Switching
In USB host and hub designs, the BSS316NH6327XTSA1 serves as a high-side or low-side VBUS switch on the 5V rail and is also usable up to 20V USB-PD. Its 30V VDS handles USB-PD 20V with margin, and the 160 mOhm RDS(on) at 1.4A contributes ~32 mW conduction loss at typical 500 mA USB load. The 600 pC total gate charge (Qg at VGS=5V) enables PWM-driven over-current limiting at microsecond response, important for USB Type-C current-advertise signaling. Compared with a P-MOSFET high-side switch of equivalent rating, the BSS316N is cheaper and offers a tighter RDS(on) tolerance because Infineon's OptiMOS 2 trench process is well-controlled across the BSS31x family.
Empfohlen
Battery Protection / Low-Side Switch
The BSS316NH6327XTSA1 is well-suited to single-cell Li-ion or 2-3S pack protection modules where it acts as a low-side discharge FET driven from a battery management IC (BMIC). Its 30V VDS handles 1S-3S battery packs safely, while the 160 mOhm on-resistance keeps conduction losses low for continuous discharge currents up to 1.4A. The 94 pF Ciss at 15V and 600 pC Qg allow the BMIC's open-drain driver to switch the part cleanly at >25 kHz. Industrial: this is a cost-down alternative to dedicated Li-ion protection MOSFETs when the load is sub-2A continuous and the application is not exposed to 40V transient events.
Empfohlen
DC-DC Converter Synchronous Rectifier
The BSS316NH6327XTSA1 can serve as a small-signal synchronous-rectifier MOSFET in sub-1A buck or buck-boost converters where the bus is below 24V. The 160 mOhm RDS(on) is competitive with the synchronous-rectifier FETs commonly used in TPS62xxx and similar PMIC companion slots, and the 30V VDS lets the converter tolerate 12V industrial rails or 4S Li-ion packs. The 94 pF Ciss keeps dead-time losses low at 1 MHz switching. Note: for continuous >2A loads, designers should step up to a DPAK or D2PAK device, but for sub-1A IoT and wearables PMIC companions, the BSS316N is a proven choice.
Empfohlen
LED Backlight & Indicator Driver
The BSS316NH6327XTSA1 fits LED backlight, status-indicator, and signal-LED driver applications in human-machine interface (HMI) panels. The 1.4A ID can drive multiple parallel LED strings or high-brightness single LEDs in PWM dimming topologies at >1 kHz. Because the LED forward voltage is typically 2-3V per die, the 30V VDS is over-spec and gives extra headroom for inductive kickback from the wiring harness. The 160 mOhm RDS(on) means that even at 1A LED current, only 160 mW is dissipated in the switch - far below the 500 mW PG-SOT23 limit, allowing compact PCB-side mounting behind the LED bezel.
Empfohlen
Industrial Logic-Level Relay Replacement
The BSS316NH6327XTSA1 is widely used as a solid-state replacement for signal relays and small electromechanical switches in industrial control panels, where 24V logic signals need to be muxed or level-shifted between PLC modules. Its 30V VDS handles 24V industrial rails with margin, and the 160 mOhm RDS(on) provides low-impedance switching for sub-1A logic currents. Compared with an electromechanical relay, the BSS316N switches in <1 us (versus ~10 ms for a mechanical relay), draws zero holding current, and has no mechanical wear - making it ideal for factory automation systems requiring >1 billion switching cycles.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für BSS316NH6327XTSA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | BSS306NH6327XTSA1 | BSS214NH6327XTSA1 | BSS816NWH6327XTSA1 | BSS308PEH6327XTSA1 | IRLML6346TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-SOT23-3 | PG-SOT23-3 (same) | PG-SOT23-3 (same) | PG-SOT23-3 (same) | PG-SOT23-3 (same) | Micro3/SOT-23-3 (same footprint) |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 60 V | 20 V | 30 V | 30 V | 30 V |
| Continuous Drain Current (ID) | 1.4 A | 1.4 A | 1.5 A | 1.6 A | -1.5 A | 3.4 A |
| RDS(on) max at VGS=10V | 160 mOhm | 250 mOhm | 140 mOhm | 155 mOhm | 180 mOhm | 50 mOhm |
| Total Gate Charge (Qg) | 600 pC at VGS=5V | 700 pC | 500 pC | 650 pC | 750 pC | 1800 pC |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | Industrial (not AEC-Q101) |
| Unit Price (qty-1, USD, as of 2026-09-10) | $0.45 | $0.50 | $0.42 | $0.48 | $0.46 | $0.55 |
Wichtigste Unterscheidungsmerkmale
- Automotive-grade AEC-Q101 qualified in PG-SOT23 (vs. IRLML6346TRPBF)
- Lower RDS(on) at same 30V VDS class (vs. BSS816NWH6327XTSA1)
- Higher VDS for industrial 24V buses (vs. BSS306NH6327XTSA1)
- Lower gate charge for fast switching (vs. IRLML6346TRPBF)
Designhinweise
Estimated: the PG-SOT23-3 package has a junction-to-ambient thermal resistance of approximately 250 C/W on a 1 oz copper, 1 square-inch JEDEC EIA/JESD51 test board. With 500 mW power dissipation, the junction-to-ambient temperature rise is roughly 125 C above ambient. For sustained operation above 1A, place at least 100 mm^2 of copper pad on the drain pin to spread heat. Do not rely on the source pin alone as a thermal path because the SOT-23 leadframe routes most heat through the drain tab. Source: Infineon BSS316N datasheet thermal-resistance section.
Place the gate-drive resistor (typically 10-100 ohm) as close as possible to the gate pin to suppress parasitic ringing caused by the gate-source capacitance and the source-lead inductance. For switching >100 kHz, add a small gate-source resistor (10 kOhm-100 kOhm) to keep the part off during power-rail ramp-up. Keep the high-dv/dt drain node away from sensitive analog traces to avoid capacitive coupling through Ciss/Crss. Source: Infineon application note AN_201411_PL11_002.
Do not operate the BSS316NH6327XTSA1 at VGS below 4.5 V if you need RDS(on) at the datasheet maximum. The 160 mOhm spec is at VGS=10 V, and RDS(on) rises sharply as VGS approaches the 2 V threshold - at VGS=4.5 V, RDS(on) can be 2-3x higher. Also, do not subject the part to avalanche operation above the rated 30V VDS - the BSS316N is not avalanche-rated, unlike the BSS84 family. Add a TVS diode or RC snubber across inductive loads. Source: Infineon BSS316N datasheet absolute-maximum section.
Compliance-Informationen
Pb-free matte-tin plating per Infineon product page. AEC-Q101 (automotive, not AEC-Q100) qualified per Infineon datasheet. RoHS compliant per chipdig.com datasheet summary.
