BSS308PEH6327XTSA1 vs BSS83PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS308PEH6327XTSA1 von Infineon und BSS83PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSS308PEH6327XTSA1 | BSS83PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,11 | $0,11 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS P (small signal / small power MOSFET) | — |
| Transistortyp | P-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | -30 V | -60 V |
| Continuous Drain Current (ID) | -2 A (Ta) | — |
| RDS(on) Max | 80 mΩ at VGS = -10 V | — |
| Gate-Source Voltage (VGS) Max | +/-20 V | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| Betriebstemperaturbereich | -55 °C to +150 °C | — |
| Gehäuse / Bauform | PG-SOT23 (SOT-23-3) | — |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 | — |
| Qualification | AEC-Q101 Automotive | Automotive grade per Infineon |
| RoHS-Status | Compliant | Compliant |
| Packaging | Tape & Reel (T/R) | — |
| Standard Reel Quantity | 3000 pcs | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| FET Type | — | P-Channel |
| Technology | — | MOSFET (Metal-Oxide Semiconductor) |
| Continuous Drain Current (ID) at TA=25C | — | 330 mA |
| Pulsed Drain Current (IDM) | — | 1.3 A |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 2.0 ohm (max) |
| Gate-Source Threshold Voltage (VGS(th)) | — | -1 V to -2.5 V (typ) |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Power Dissipation (PD) at TA=25C | — | 360 mW |
| Betriebs-Sperrschichttemperatur | — | -55 C to +150 C |
| Gehäuse | — | PG-SOT23 (SOT-23-3) |
| Process Technology | — | SIPMOS / OptiMOS |