BSS816NWH6327XTSA1 vs BSL316CH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS816NWH6327XTSA1 von Infineon und BSL316CH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS816NWH6327XTSA1 | BSL316CH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,14 | $0,22 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | BSS816NW (OptiMOS 2 Small-Signal) | OptiMOS small-signal complementary MOSFET |
| Transistortyp | MOSFET, N-Channel | — |
| Drain-Source Voltage (VDS) | 20 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th) min/typ/max] |
| RDS(on) max @ VGS=4.5V | 160 mOhm | — |
| RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | — |
| Power Dissipation (PD) at TA=25C | 500 mW | — |
| Betriebstemperaturbereich | -55C to +150C | — |
| Gehäuse | SOT-323 (PG-SOT323), 3-pin | PG-TSOP6-6 (TSOP6, 6-pin) |
| Montageart | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| Technology | OptiMOS 2 trench MOSFET | OptiMOS low-voltage MOSFET |
| ESD Protection | Yes (integrated, per Infineon datasheet) | — |
| RoHS / Lead-Free | RoHS compliant, lead-free | — |
| MSL-Level | 1 | [DATA_NEEDED: MSL level] |
| Configuration | — | Complementary pair (1 N-channel + 1 P-channel in one package) |
| Continuous Drain Current (N-channel ID) | — | 1.4 A |
| Continuous Drain Current (P-channel ID) | — | 1.5 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Betriebstemperatur | — | -55C to +150C (junction) |
| Channel Type | — | N-channel + P-channel (dual) |
| Pin-Anzahl | — | 6 |
| RoHS-Status | — | Compliant |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |