BSZ036NE2LSATMA1 vs BSC050NE2LSATMA1 Vergleich
Detaillierter Direktvergleich von BSZ036NE2LSATMA1 von Infineon und BSC050NE2LSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSZ036NE2LSATMA1 | BSC050NE2LSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,42 | $0,36 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA=25C | 16 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 37 W | — |
| Gehäuse | PG-TSDSON-8-FL (5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Configuration | Single | — |
| Betriebstemperaturbereich | -55C to +150C | -55C to +150C |
| MSL-Level | 1 (Unlimited) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Gate Drive | Logic-level compatible | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 25 V |
| Continuous Drain Current (I_D) at Tc=25C | — | 58 A |
| Continuous Drain Current (I_D) at Ta=25C | — | 39 A |
| R_DS(on) max at V_GS=10V | — | 5 mOhm |
| R_DS(on) typical at V_GS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 28 W |
| Technology | — | OptiMOS 25V (trench) |