BSZ0901NSIATMA1 vs BSZ031NE2LS5ATMA1 Vergleich
Detaillierter Direktvergleich von BSZ0901NSIATMA1 von Infineon und BSZ031NE2LS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSZ0901NSIATMA1 | BSZ031NE2LS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,34 | $0,26 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0901NSIATMA1 | BSZ031NE2LS5ATMA1 |
| Series | OptiMOS 25V | — |
| Technology | OptiMOS trench N-channel MOSFET | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 25 A | 19 A |
| Continuous Drain Current (ID) at Tc=25C | 40 A | 40 A |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 69 W | — |
| Gehäuse | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| Betriebstemperaturbereich | -55 C to +150 C (typical MOSFET range) | — |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | — |
| RoHS-Status | Compliant | Compliant |
| Technology / Platform | — | OptiMOS 5 25V/30V N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | — | 25 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10 V | — | 3.1 mOhm |
| RDS(on) typical @ VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 30 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +150 C |
| MSL-Level | — | [DATA_NEEDED: MSL] |
| Lead-Free | — | Yes |
| Halogenfrei | — | Yes |