BSZ0901NSIATMA1 vs BSZ031NE2LS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSZ0901NSIATMA1 dari Infineon dan BSZ031NE2LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ0901NSIATMA1 BSZ031NE2LS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0901NSIATMA1 BSZ031NE2LS5ATMA1
Series OptiMOS 25V —
Technology OptiMOS trench N-channel MOSFET —
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 25 A 19 A
Continuous Drain Current (ID) at Tc=25C 40 A 40 A
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 69 W —
Paket PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max @ VGS=10V] —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) max @ VGS=4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
Rentang Suhu Kerja -55 C to +150 C (typical MOSFET range) —
Packaging Tape & Reel (ATMA1 suffix = 13-inch reel) —
Status RoHS Compliant Compliant
Technology / Platform — OptiMOS 5 25V/30V N-channel trench MOSFET
Drain-Source Voltage (VDS) max — 25 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
RDS(on) max @ VGS=10 V — 3.1 mOhm
RDS(on) typical @ VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Power Dissipation at Ta=25C — 2.1 W
Power Dissipation at Tc=25C — 30 W
Suhu Hubung Kerja — -55 C to +150 C
Level MSL — [DATA_NEEDED: MSL]
Lead-Free — Yes
Bebas Halogen — Yes

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