BSZ0904NSIATMA1 vs IAUCN08S7L033ATMA1 Vergleich
Detaillierter Direktvergleich von BSZ0904NSIATMA1 von Infineon und IAUCN08S7L033ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSZ0904NSIATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,49 | $0,86 |
| Technology | OptiMOS (N-channel power MOSFET) | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 18 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| On-State Resistance RDS(on) max at VGS=4.5V | 4 mOhm | — |
| On-State Resistance RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Power Dissipation at Ta | 2.1 W | — |
| Power Dissipation at Tc | 37 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V (typical Infineon OptiMOS 7 limit) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical] |
| Betriebstemperaturbereich | -55C to +150C | -55°C to +175°C (TJ) |
| Gehäuse | PG-TSDSON-8-FL (PQFN 3.3x3.3) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Montageart | Surface Mount | Surface Mount |
| Integrated Schottky-like Diode | Yes (monolithic) | — |
| Avalanche Rated | 100% avalanche tested | — |
| Qualification | JEDEC qualified for target applications | Automotive Grade (per Infineon datasheet header) |
| Lead Plating | Pb-free | — |
| RoHS-Status | Compliant | Compliant |
| Halogenfrei | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| MSL-Level | — | 1 (per JEDEC J-STD-020, typical for this package) |